Two New Medium Power Amplifiers Target Microwave & Millimeterwave Radios
Die & Plastic SMT Versions Cover 5 - 18 & 34 - 42 GHz Frequency Bands!
Chelmsford, Ma 10/16/2008 -
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced two new additions to its medium power amplifier product line. These GaAs PHEMT MMIC amplifiers provide frequency coverage in the 5 to 18 GHz and 34 to 42 GHz bands and are ideal for use in a wide range of applications including point-to-point & point-to-multipoint radios, VSAT, military & space, fiber optics, sensors and test instrumentation.
The HMC451LP3E is a highly efficient, GaAs PHEMT MMIC medium power amplifier which operates from 5 to 18 GHz. The amplifier provides 18 dB of gain and +21 dBm of saturated output power at 18% PAE, while consuming only 120 mA from a +5V supply. The HMC451LP3E also features +28 dBm output IP3, operates from -40°C to +85°C, and is housed in a leadless RoHS compliant plastic SMT package. The HMC451LP3E also provides 50 Ohm matched and DC blocked I/Os and requires no external matching components, making it an ideal linear gain block or LO driver for Hittite's wide range of mixer products.
The HMC-ABH264 is a high dynamic range GaAs PHEMT MMIC medium power amplifier chip which operates between 34 and 42 GHz. The HMC-ABH264 provides 18.5 dB of gain, a P1dB of +18 dBm and +29 dBm output IP3, while consuming only 120 mA from a single +5V supply. The HMC-ABH264 also features 50 Ohm matched and DC blocked I/Os and provides excellent gain flatness over its rated bandwidth. Specified for operation from -55°C to +85°C, this highly compact amplifier is ideal for integration into Multi-Chip-Modules (MCMs).
Die samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.
Hittite Microwave Corporation is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation for RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/3G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.